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AFP2311A
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20V P-Channel Enhancement Mode MOSFET
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  • Features

     -20V/-2.8A,RDS(ON)=55mΩ@VGS=-4.5V 

     -20V/-2.2A,RDS(ON)=70mΩ@VGS=-2.5V 

     -20V/-1.8A,RDS(ON)=92mΩ@VGS=-1.8V 

     Super high density cell design for extremely low RDS (ON) 

     Exceptional on-resistance and maximum DC current capability 

     SOT-23 package design

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